Title of article
Spin dependent transport: GMR & TMR
Author/Authors
Schuhl، نويسنده , , Alain and Lacour، نويسنده , , Daniel، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
11
From page
945
To page
955
Abstract
The discovery of giant magnetoresistance in 1988 opened the large research field of ‘spintronics’. Twenty years later, a large number of devices makes use of the electronʹs spin, in addition to its charge, to control electronic transport properties. The physical origin of spintronic phenomena is the different conduction properties of the majority and minority spin electrons in a ferromagnetic metal. At an interface involving a ferromagnetic conductor, this leads to spin dependent conduction or tunneling properties. Here we present an overview of magnetotransport phenomena in structures involving metallic layers. To cite this article: A. Schuhl, D. Lacour, C. R. Physique 6 (2005).
Keywords
GMR , GMR , magnetoresistance , TMR , TMR , Spin dependent transport , Magnétorésistance , Transport dépendant du spin
Journal title
Comptes Rendus Physique
Serial Year
2005
Journal title
Comptes Rendus Physique
Record number
2283597
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