Temperature dependence of hydrogen isotope behaviors in non-He+ pre-implanted SiC and He+ pre-implanted SiC

The implantation temperature dependence of hydrogen isotope behaviors in non-helium ion (He+) pre-implanted silicon carbide (SiC) and He+ pre-implanted SiC was studied by means of X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that the deuterium (D) retention decreases as the implantation temperature increases in both non-He+ pre-implanted SiC and He+ pre-implanted SiC after D2+ implantation. Above 800 K, D bound only to C in forming C–D bonds. The chemical states of Si 2p for non-He+ pre-implanted SiC and He+ pre-implanted SiC at implantation temperatures above 800 K are quite different from those at room temperature and a positive peak shift of Si 2p was observed, indicating Si–C–D bonds were formed without larger amount of retention of damaged structures. These facts indicate that damaged structures introduced by D2+ and/or He+ implantation are quickly recovered by the thermal annealing effect at temperature above 800 K. These results imply that the thermal annealing effect influence widely on the tritium behavior and damaged structures in SiC.