High speed QWIP FPAs on InP substrates

Quantum well infrared photodetector (QWIP) technology has allowed the realization of low cost staring focal plane arrays (FPAs). However, AlGaAs/(In)GaAs QWIP FPAs suffer from low quantum and conversion efficiencies under high frame rate and/or low background conditions. ensively discuss the effect of sensor gain on the FPA performance under various operating conditions, and highlight the superiority of the InP/InGaAs material system with respect to AlGaAs/GaAs for high speed/low background thermal imaging applications. InP/InGaAs QWIPs, providing a bias adjustable gain in a wide range, offer the flexibility of adapting the FPA to strict operating conditions. o present an experimental comparison of large format AlGaAs/GaAs and (strained) InP/InGaAs QWIP FPAs under different operating conditions. A 640 × 512 QWIP FPA constructed with the 40-well strained InP/In0.48Ga0.52As material system displays a cut-off wavelength of 9.7 μm (λp = 8.9 μm) with a BLIP temperature higher than 65 K (f/2), and a peak quantum efficiency as high as 12% with a broad spectral response (Δλ/λp = 17%). The conversion efficiency of the FPA pixels is as high as 20% under large bias (4 V) where the detectivity is reasonably high (∼3 × 1010 cm Hz1/2/W, f/2, 65 K). While providing a considerably higher quantum efficiency than the pixels of a similar AlGaAs/GaAs FPA, the InP/InGaAs QWIP provides similar NETD values with much shorter integration times and, being less sensitive to the read noise, successfully operates with sub-millisecond integration times. sults clearly demonstrate that InP based material systems display high potential for single- and dual-band QWIP FPAs by overcoming the limitations of the standard GaAs based QWIPs under high frame rate and/or low background conditions.