Title of article
Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection
Author/Authors
Lin، نويسنده , , Wei-Hsun and Lin، نويسنده , , Shih-Yen and Tseng، نويسنده , , Chi-Che and Kung، نويسنده , , Shu-Yen and Chao، نويسنده , , Kuang-Ping and Mai، نويسنده , , Shucheng and Wu، نويسنده , , Meng-Chyi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
220
To page
223
Abstract
A two-terminal quantum-dot infrared photodetector (QDIP) with stacked 5-period InAs/GaAs and InGaAs-capped InAs/GaAs QD structures is investigated in this paper. The device has exhibited distinct responses at mid-wavelength and long-wavelength infrared regions under positive and negative biases, respectively. Also observed for the device are the equal normal absorption ratios under different voltage biases for the device under either MWIR or LWIR ranges. The device has revealed its potential in the application of voltage-tunable and multi-color detections.
Keywords
Quantum-dot infrared photodetectors , Quantum dots , Multi-color detection
Journal title
Infrared Physics & Technology
Serial Year
2011
Journal title
Infrared Physics & Technology
Record number
2375921
Link To Document