InAs/GaSb superlattices grown by LP-MOCVD for ∼10 μm wavelength infrared range

A type-II InAs/GaSb superlattice (SL) was grown on Te-doped (1 0 0) GaSb substrate by low pressure metal organic chemical vapor deposition (LP-MOCVD). The samples were obtained at different growth temperatures and with different interface layers. By introducing an InAsSb interface layer between InAs and GaSb, a good surface morphology of the superlattice was achieved when the sample growth temperature was around 500–520 °C. The photoluminescence (PL) peak wavelength of the sample was 10.7 μm at 77 K, with FWHM of ∼30 meV.