• Title of article

    Experimental evidence for the third level (А+) of Hg vacancy in Hg1−xCdxTe

  • Author/Authors

    Shepelskii، نويسنده , , G.A. and Strikha، نويسنده , , M.V. and Gassan-zade، نويسنده , , S.G.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    4
  • From page
    481
  • To page
    484
  • Abstract
    Mercury vacancy in Hg1-xCdxTe is not a two-level (as it was supposed until now), but a three-level acceptor. A third, most shallow (1–1.5 meV) level (А+ state) appears due to a capture of a third hole by a neutral acceptor, after the two deeper vacancy levels (A− and А0 states) are already occupied by holes. Due to a capture of nonequilibrium holes by neutral mercury vacancies (under radiation) a positive space charge region arises near an irradiated surface. This causes the anomalies of photoelectromagnetic effect, observed in р-Hg1−xCdxTe at T < 10–12 K.
  • Keywords
    Photoelectromagnetic effect , Hg1?xCdxTe , Mercury vacancy
  • Journal title
    Infrared Physics & Technology
  • Serial Year
    2012
  • Journal title
    Infrared Physics & Technology
  • Record number

    2376120