Title of article
Experimental evidence for the third level (А+) of Hg vacancy in Hg1−xCdxTe
Author/Authors
Shepelskii، نويسنده , , G.A. and Strikha، نويسنده , , M.V. and Gassan-zade، نويسنده , , S.G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
481
To page
484
Abstract
Mercury vacancy in Hg1-xCdxTe is not a two-level (as it was supposed until now), but a three-level acceptor. A third, most shallow (1–1.5 meV) level (А+ state) appears due to a capture of a third hole by a neutral acceptor, after the two deeper vacancy levels (A− and А0 states) are already occupied by holes. Due to a capture of nonequilibrium holes by neutral mercury vacancies (under radiation) a positive space charge region arises near an irradiated surface. This causes the anomalies of photoelectromagnetic effect, observed in р-Hg1−xCdxTe at T < 10–12 K.
Keywords
Photoelectromagnetic effect , Hg1?xCdxTe , Mercury vacancy
Journal title
Infrared Physics & Technology
Serial Year
2012
Journal title
Infrared Physics & Technology
Record number
2376120
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