Title of article
InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy
Author/Authors
Yin، نويسنده , , M. and Krier، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
4
From page
47
To page
50
Abstract
InSb has been grown by liquid phase epitaxy using indium rich solutions with a supercooling of 2–5 °C onto (1 1 1) oriented Cd0.955Zn0.045Te substrates at 400–405 °C. The resulting epitaxial layers were extensively characterized using X-ray diffraction, optical microscopy, Raman spectroscopy and photoluminescence.
Keywords
InSb , CdZnTe/CdTe , Raman spectroscopy , liquid phase epitaxy
Journal title
Infrared Physics & Technology
Serial Year
2013
Journal title
Infrared Physics & Technology
Record number
2376198
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