Title of article
Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes
Author/Authors
Brunkov، نويسنده , , P.N. and Il’inskaya، نويسنده , , N.D. and Karandashev، نويسنده , , S.A. and Lavrov، نويسنده , , A.A. and Matveev، نويسنده , , B.A. and Remennyi، نويسنده , , M.A. and Stus’، نويسنده , , N.M. and Usikova، نويسنده , , A.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
4
From page
62
To page
65
Abstract
Double heterostructure (DH) photodiodes (PDs) with InAs active layer and back-side illumination have been studied in the 100–300 K temperature range. Temperature dependence of a spectral response was standard for InAs based PDs while saturation current (or zero bias resistance) was characterized by a single value of the activation energy with domination of a diffusion current at most temperatures. As a result the simulated detectivity value was beyond the known numbers for homo- and heterojunction InAs PDs.
Keywords
Photodiode structures , IR sensors , Dark current
Journal title
Infrared Physics & Technology
Serial Year
2014
Journal title
Infrared Physics & Technology
Record number
2376567
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