The Electron Stopper Layer Effect on Long-Wavelength VCSEL with AsSb-Based DBR Temperature Distribution

In this study, we have theoretically investigated the effect of electron stopper layer on internal temperature distribution of high performance vertical cavity surface-emitting laser emitting at 1305 nm. Simulation software PICS3D, which self-consistently combines the 3D simulation of carrier transport, self-heating, gain computation and wave-guiding, was used. Simulation results show that change the electron stopper layer properties affect the internal temperature distribution of the device. The temperature of the active region increases compared with the original device. Comparison of temperature distribution in devices with different electron stopper layer confirms that optimized structure operates at maximum temperature.