Scattering mechanism of nonmagnetic phase on nano diluted magnetic semiconductors (DMS)

This paper shows the scattering mechanism at diluted magnetic semiconductors. The doped magnetic atom produces a scattering potential due to be coupled of itinerant carrier spin of host material with magnetic momentum of the doped magnetic atom. Formulas of scattering event were rewritten by the plane wave expansion and then the electron mobility of DMS was calculated. Calculations show Kondo effect on diluted magnetic semiconductors at nonmagnetic phase. Here has been supposed that the doping concentration is low and so the coupling coefficient between magnetic atoms is weak enough that DMS does not change its magnetic phase. In other words, material is on paramagnetic phase. For proofing our model, we have grown Zn0.99Mn0.01O with Sol-Gel route. Pure ZnO has also grown with this method for a comparison. Experimental results proved our theoretical model. Therefore as a result, at diluted magnetic semiconductors similar to diluted magnetic metals in nonmagnetic phase can observe kondod's effect