Optical absorption at one-particle states of charge carriers in semiconductor quantum dots

It is shown that the oscillator strengths and dipole moments of the transitions for one-particle states of charge carriers that originated in semiconductor quantum dots take on large values, significantly exceeding the typical values of the corresponding values for semiconductor materials. In the framework of the dipole approach, it is shown that large values of the cross section of light in the studied quasi-zero-dimensional systems enable the use of such nanosystems as new strongly absorbing nanomaterials.