Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application

In this paper, a non-linear approach for design and analysis of solid-state power amplifiers is presented and used for AlGaN-GaN high electron-mobility transistor (HEMTs) on SiC substrate for Ku band(12.4 - 13.6 GHz) applications. With combining the output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear gain of 22.9 dB were achieved and good agreement has been obtained between the simulation and analysis results.