Title of article
A Simple General-purpose I-V Model for All Operating Modes of Deep Submicron MOSFETs
Author/Authors
Valiollahi ، S. Department of Electrical and Computer Engineering - Babol Noshirvani University of Technology , Ardeshir ، G. Department of Electrical and Computer Engineering - Babol Noshirvani University of Technology
From page
270
To page
277
Abstract
A simple general-purpose I-V model for all operating modes of deep-submicron MOSFETs is presented. Considering the most dominant short channel effects with simple equations including few parameters, a reasonable trade-off between simplicity and accuracy is established. To further improve the accuracy, model parameters are optimized over various channel widths and full ranges of operating voltages using a heuristic optimization algorithm. The obtained results demonstrate only 1.28% and 0.97% average error in IBM 0.13um CMOS technology node for NMOS and PMOS, respectively, comparing with the accurate physically-based BSIM3 model. Furthermore, the tolerance of the model accuracy against parameters variation is investigated.
Keywords
Deep Submicron , Heuristic Optimization , MOSFET Modeling , nth , Power Law Model , Short Channel Effects , Sub , threshold Current
Journal title
International Journal of Engineering
Record number
2502580
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