Title of article
Semiconducting properties of In3Te4 crystals: An experimental study
Author/Authors
GAMAL, Gadelkarim Ata South Valley University - Faculty of Science - Physics Department, EGYPT , ABOUZIED, Mohamed Ali South Valley University - Faculty of Science - Physics Department, EGYPT , SANAA, Mohamud Fouad South Valley University - Faculty of Science - Physics Department, EGYPT
From page
31
To page
38
Abstract
Indium Telluride In3 Te4 crystal was characterized for electrical conductivity, Hall mobility, carrier concentration, and thermoelectric power (TEP) as a function of temperature in the range 202–526 K this was done with the aid of liquid nitrogen which enabled us to detect the intrinsic behavior. The crystals were prepared by a modified vertical Bridgman technique. Throughout these measurements various physical parameters, such as effective mass of charge carriers, carrier mobility, diffusion coefficient, and relaxation time for both majority and minority carriers were found.
Keywords
In3 Te4 , crystal growth , semiconductors , thermoelectric power , electrical conductivity Hall effect
Journal title
Turkish Journal of Physics
Journal title
Turkish Journal of Physics
Record number
2528787
Link To Document