• Title of article

    Processing of germanium for integrated circuits

  • Author/Authors

    DUFFY, Ray University College Cork - Tyndall National Institute, Ireland , SHAYESTEH, Maryam University College Cork - Tyndall National Institute, Ireland , YU, Ran University College Cork - Tyndall National Institute, Ireland

  • From page
    463
  • To page
    477
  • Abstract
    In this review paper the authors will focus on Ge processing for integrated circuits. The key areas that require the most attention are substrates and integration, gate dielectrics, and access resistance. We will discuss each of these topics in turn, while also reviewing the most scaled Ge field-effect-transistor devices, and consider how modelling activities have matured for Ge in recent years.
  • Keywords
    Semiconductors , Germanium , Processing , Substrates , Integration , Dielectrics , Resistance , Field , effecttransistors
  • Journal title
    Turkish Journal of Physics
  • Journal title
    Turkish Journal of Physics
  • Record number

    2528886