• Title of article

    GaN nanostructuring for the fabrication of thin membranes and emerging applications

  • Author/Authors

    TIGINYANU, Ion Academy of Sciences of Moldova - Institute of Electronic Engineering and Nanotechnologies, Moldova , TIGINYANU, Ion Technical University of Moldova - National Center for Materials Study and Testing, Moldova , URSAKI, Veaceslav Academy of Sciences of Moldova - Institute of Electronic Engineering and Nanotechnologies, Moldova

  • From page
    328
  • To page
    368
  • Abstract
    We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.
  • Keywords
    GaN nanomembranes , wet etching , photoelectrochemical etching , dry etching , liftofi techniques , e , beam lithography , surface charge lithography , photonic crystal membrane nanocavities , sensors
  • Journal title
    Turkish Journal of Physics
  • Journal title
    Turkish Journal of Physics
  • Record number

    2528897