Title of article
Borophosphosilicate Glass (BPSG) Reflow Characterization For Submicron CMOS Technology
Author/Authors
HASHIM, UDA Universiti Malaysia Perlis (UNIMAP) - School of Microelectronic Engineering - Micro Fabrication Cleanroom, Malaysia , AYUB, RAMZAN MAT Kolej Universiti Kejuruteraan Utara Malaysia - School of Microelectronic Engineering - Micro Fabrication Cleanroom, Malaysia , HAMAT, NIK HAZURA N. Kolej Universiti Kejuruteraan Utara Malaysia - School of Microelectronic Engineering - Micro Fabrication Cleanroom, Malaysia
From page
53
To page
57
Abstract
This paper involves the planarization of borophosphosilicate glass (BPSG) film using a new recipe for annealing process to improve the borophosphosilicate glass (BPSG) film flatness after reflow. This improvement is for 0.35µm technology using steam annealing method at different temperatures. This process allows the planarization of wafers with thin layer at its surface. In this paper we present the comparison between the effect of hydrofluoric acid (HF) staining on the cross sectional topography with the samples without hydrofluoric acid (HF) staining analyzed by field emission scanning electron microscopy (FESEM). We found that staining with HF produced clearer images.
Keywords
borophosphosilicate glass , steam annealing , hydrofluoric acid staining
Record number
2554466
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