Title of article
Fabrication and Transport Performance Characterization of Chemically-Doped Three-branch Junction Graphene Device
Author/Authors
ABD RAHMAN, SHAHARIN FADZLI Universiti Teknologi Malaysia - Faculty of Electrical Engineering, Malaysia , KASAI, SEIYA Hokkaido University - Graduate School of information Science and Technology, Research Center for integrated Quantum Electronics, Japan , HASHIM, ABDUL MANAF Universiti Teknologi Malaysia, International Campus - Malaysia-Japan international institute of Technology (MJIIT), Malaysia
From page
187
To page
192
Abstract
A graphene-based three-branch nanojunction (TBJ) device having nanowire width of 200 nm was successfully fabricated. The layer number of graphene prepared by mechanical exfoliation was determined using a simple optical contrast method which showed good agreement with theoretical value. n-type doping by Polyethylene imines (PEI) was done to control the position of Dirac point. Baking and PEI doping was found to decrease contact resistance and increase the carrier mobility. The chemically-doped TBJ graphene showed carrier mobility of 20000 cm^2/Vs, which gave related mean free path of 175 nm.
Keywords
Chemical doping , graphene , three , branch junction device
Record number
2555583
Link To Document