Title of article
Temperature dependence dielectric behavior of Ge-doped lead scandium tantalate single crystals
Author/Authors
Dixit, Chandra Kumar Feroze Gandhi Institute of Engineering and Technology - Department of Physics, India , Srivastava, Anil Kumar Kamla Nehru Institute of Physical and Social Sciences - Central Laboratory of Material Science, India
From page
1
To page
3
Abstract
The doping of Pb2SeTaO6 with Ge ferroelectrics was produced by a high-temperature solution method. We measure dielectric constant, dielectric loss and conductivity in the temperature range −30°C to 200°C and frequency range 1 to 100 KHz. The value of dielectric constant of the Pb2SeTaO6 (PST) crystal remained the same after thermal annealing whereas they decreased after Ge doping in the phase transition temperature range of the PST single crystal. All samples were investigated for conductivity with increasing temperature.
Keywords
Dielectric constant , Ferroelectric , Paraelectric , Crystal lattice , Conductivity
Journal title
Journal of Theoretical and Applied Physics
Journal title
Journal of Theoretical and Applied Physics
Record number
2578355
Link To Document