Title of article
Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction
Author/Authors
Shehab, A. A. University of Baghdad - College of Science - Department of Physics, Iraq , Al-Lamy, H. Kh. University of Baghdad - College of Science - Department of Physics, Iraq , Mustafa, M. H. University of Baghdad - College of Education Ibn al Hathaim - Department of Physics, Iraq
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Abstract
In this work, we are Study the effect of annealing temperature on the structure of a-Ge films doped with Sb and the electrical properties of a-Ge:Sb/c-Si heterojunction fabricated by deposition of a-Ge:Sb film on c-Si by using thermal evaporation. Electrical properties of a- Ge:Sb/c-Si heterojunction include I-V characteristics in dark at different annealing temperatures and C-V characteristics and with the C-V characteristics suggest that the fabricated heterojunction was abrupt type, built in potential determined by extrapolation from 1/C2-V curve and show that the built - inpotential (Vbi) for the Ge:Sb/Si system increases with the increase of annealing temperatures
Journal title
Ibn Alhaitham Journal For Pure and Applied Science
Journal title
Ibn Alhaitham Journal For Pure and Applied Science
Record number
2601787
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