Title of article
Photoluminescence Behavior of Cu2+xZn1-xSnS4 Thin Films by SILAR Method
Author/Authors
henry, j. manonmaniam sundaranar university - department of physics, Tirunelveli, India , mohanraj, k. manonmaniam sundaranar university - department of physics, Tirunelveli, India , sivakumar, g. annamalai university - department of physics, Nagar, India
From page
101
To page
105
Abstract
Cu2ZnSnS4 thin films were deposited on a glass substrate by chemical method. The XRD pattern confirms the formation of tetragonal structure CZTS and peak shift is noticed for Cu doping. The absorption coefficient is in the order of 10^4cm^-1 and the band gap is found to be about 1.9 eV – 1.75 eV. The PL spectra show red shift for higher Cu doping concentrations.
Keywords
Photoluminescence , Cu2ZnSnS4 thin films , SILAR Method , XRD
Journal title
Jordan Journal of Physics
Journal title
Jordan Journal of Physics
Record number
2644323
Link To Document