Title of article
Studing Optical and Electrical Properties of Bi203 Thin Filam for Optoelectronic Applications
Author/Authors
Zalzala, Hashim A.R Institution of Technology - Electrical Department, Iraq , Muhson, Basheer Y. Institution of Technology - Electrical Department, Iraq , Ahmed, Muhnad A. Institution of Technology - Electrical Department, Iraq
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Abstract
Bismuth oxide thin film has been prepared on KB7 glass substrates using slow thermal oxidizing bismuth films of thickness (80 nm) in air at 473 K for 10 hours. The structure Characterization of the film was carried out with XRD. The results of XRD technique shows that all samples have a polycrystalline and multiphase (α-Bi2O3 and β-Bi2O3). the optical transmittance in visible region was investigated. The optical energy gap (Eg = 2.5 eV) determined from absorption specter. The dark resistivity and thermoelectric power (TEP) were investigated. The electrical resistivity is of the order of 106 ohm-cm. and the thin film n-type semiconductor It was found that the activation energy Ea.
Keywords
bismuth oxide , thin films , spray pyrolysis , electrical properties , optical properties.
Journal title
Al-Nahrain Journal Of Science
Journal title
Al-Nahrain Journal Of Science
Record number
2645593
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