Pencirian Keadaan Potong Bawah Penjuru ke Atas Diafragma Beralun Silikon

This paper reports on the study of the corner-undercutting phenomenon that occurs at the convex corner structures on silicon (100) corrugated diaphragm. The anisotropic etching technique with aqueous potassium hydroxide as the etchant was used to produce the corrugated diaphragm. The optimum etching condition of 35% KOH concentration and 80°C temperature was applied for the formation of this corrugated diaphragm. The identification of new emergent silicon planes on the etched convex corner was done based on the simulation and experimental results. The maximum amount of corner undercutting was also determined in this study. It can be concluded that the dominant facets contributing to the undercutting of the convex corners of the corrugated diaphragm for the given etching condition is silicon (411) planes.