PEMBENTUKAN DIAFRAGMA BERALUN SILIKON D ENGAN MENGGUNAKAN TEKNIK PUNARAN ANISOTROPIK

This paper presents the study of the formation of a perfect silicon corrugateddiaphragm using anisotropic etching technique. Potassim hydroxide (KOH) solution is usedas the etching solvent in this study. This study includes optimization of the etching mask, inorder to avoid the problem of corner undercutting which exists on all convex corner structureson the etched corrugated diaphragm. Results from the simulation and experimental studieshave proved that the optimized etching mask design was able to overcome the problem ofconvex corner undercutting.