Formation of Aluminum Nitride Using Lithium Nitride as a Source of N3- in the Molten Aluminum Chloride

Synthesis of aluminum nitride, known as wide gap semiconductor, was attempted by the molten salt method using lithium nitride as the source of N3- ion and aluminum chloride as the source of aluminum ion and the medium of lithium nitride at 250 °C. Production of aluminum nitride was recognized from the spectra of XRD and XPS. Production of aluminum nitride suggests the simple reaction mechanism that the N3- ion ionize from lithium nitride in the molten aluminum chloride with Al3+ ion.