Title of article
Impact of the CNT Parameter Variations on Performance of Digital Circuits Based on CNTFET
Author/Authors
Marani ، Roberto Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA) - National Research Council of Italy , Perri ، Anna Gina Electronic Devices Laboratory, Department of Electrical and Information Engineering - Polytechnic University of Bari
From page
33
To page
46
Abstract
In this paper we propose a method to study the impact of the CNT parameter variations on performance of CNTFET digital circuits. In particular we consider CNT parameters that fully identify the geometrical properties of a regular CNT, which are the length and structural indices (n, m) of CNT. We analyse in particular the effects on NAND gate using a N and P type CNTFET, polarizing at a fixed voltage and varying the CNT parameters. As regards the indices, we limit the analysis to zig-zag CNT, highlighting that the proposed procedure can be applied to other types of CNT.
Keywords
nanoelectronics , Nanodevices , CNT , CNTFET , Modelling , Digital circuits , Verilog , A
Journal title
International Journal of Nanoscience and Nanotechnology (IJNN)
Journal title
International Journal of Nanoscience and Nanotechnology (IJNN)
Record number
2763230
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