Title of article
Formation of heterostructure of A3B6 semiconductor compounds by surface laser modification
Author/Authors
Gotra، Z. نويسنده , , Stakhira، P. نويسنده , , Tokarev، I. نويسنده , , Proszak، W. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
-298
From page
299
To page
0
Abstract
This article refers to our research results concerning creation of the oxide layers produced on the surface of GaSe crystals. These layers are obtained by the exposition of the samples in a pulsed laser beam. Measurements of the received layers were performed by a cathodoluminescence (CL) analysis method as well AES and XES methods. The spectrum was analyzed in the range of 1.2-4.5eV
Keywords
Silicon oxinitride , Amorphous thin films , Optical second harmonic generation , Non-linear optical method of investigations
Journal title
OPTICS & LASERS IN ENGINEERING
Serial Year
2001
Journal title
OPTICS & LASERS IN ENGINEERING
Record number
30260
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