Title of article
PbO–Bi2O3–Ga2O3–BaO glasses doped by Er3+ as novel materials for IR emission
Author/Authors
Kityk، I. V. نويسنده , , Wasylak، J. نويسنده , , Dorosz، D. نويسنده , , Kucharski، J. نويسنده , , Benet، S. نويسنده , , Kaddouri، H. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
-510
From page
511
To page
0
Abstract
We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control InAs/InP selfassembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6×1010 cm-2 at 4 monolayers InAs layer.
Keywords
GLASS , Rare-earth ions , ABSORPTION , luminescence
Journal title
OPTICS & LASER TECHNOLOGY
Serial Year
2001
Journal title
OPTICS & LASER TECHNOLOGY
Record number
32012
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