Title of article
Analysis of heterojunction resonant cavity-enhanced Schottky photodiodes by using two-valley transport model
Author/Authors
D. S. Golubovic، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
8
From page
327
To page
334
Keywords
Phenomenological model for a two-valleysemiconductor , High-speed heterojunction resonant cavity-enhanced Schottky photodiodes , Linear response , Quantum efficiency
Journal title
Infrared Physics & Technology
Serial Year
2002
Journal title
Infrared Physics & Technology
Record number
327789
Link To Document