Title of article
Electrical and photoelectrical properties of isotype N+-GaSb/n0-GaInAsSb type II heterojunctions
Author/Authors
M. A. Afrailov، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
7
From page
169
To page
175
Keywords
Type II heterojunctions with staggered band alignment , Isotype structures , Photo-response , Dark current
Journal title
Infrared Physics & Technology
Serial Year
2004
Journal title
Infrared Physics & Technology
Record number
327881
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