Title of article
Effective attenuation length of Al Kα-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films
Author/Authors
R.G. Vitchev، نويسنده , , Chr. Defranoux، نويسنده , , J. Wolstenholme، نويسنده , , T. Conard، نويسنده , , H. Bender and J.J. Pireaux، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
8
From page
37
To page
44
Keywords
XPS , Effective attenuation length , High-k material
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA
Serial Year
2005
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA
Record number
380538
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