Title of article
A New Derivation of the Law of the Junctions
Author/Authors
S. M. Joshi and H. R. Pota، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
3
From page
497
To page
499
Abstract
In this paper, the author presents students with a new
and simple derivation of the law of the junctions. The law of the
junctions is crucial to the correct understanding of the operation
of the bipolar junction transistor. The integral of the product of
the density of energy states and Fermi–Dirac distribution function
is used to derive the density of free electrons and holes crossing
from one side to another at a pn-junction under an external applied
voltage.
Keywords
Bipolar junction transistor (BJT) , diode current , electrons crossing over , pn-junction built-in potential , the law ofthe junctions.
Journal title
IEEE TRANSACTIONS ON EDUCATION
Serial Year
2004
Journal title
IEEE TRANSACTIONS ON EDUCATION
Record number
398188
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