• Title of article

    A New Derivation of the Law of the Junctions

  • Author/Authors

    S. M. Joshi and H. R. Pota، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    3
  • From page
    497
  • To page
    499
  • Abstract
    In this paper, the author presents students with a new and simple derivation of the law of the junctions. The law of the junctions is crucial to the correct understanding of the operation of the bipolar junction transistor. The integral of the product of the density of energy states and Fermi–Dirac distribution function is used to derive the density of free electrons and holes crossing from one side to another at a pn-junction under an external applied voltage.
  • Keywords
    Bipolar junction transistor (BJT) , diode current , electrons crossing over , pn-junction built-in potential , the law ofthe junctions.
  • Journal title
    IEEE TRANSACTIONS ON EDUCATION
  • Serial Year
    2004
  • Journal title
    IEEE TRANSACTIONS ON EDUCATION
  • Record number

    398188