• Title of article

    Operation of nanocrystalline-silicon-based few-electron memory devices in the light of electron storage, ejection, and lifetime characteristics

  • Author/Authors

    Banerjee، نويسنده , , S.، نويسنده , , Shaoyun Huang، نويسنده , , Oda، نويسنده , , S.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    5
  • From page
    88
  • To page
    92
  • Keywords
    Memory , nanotechnology. , MOSFETs
  • Journal title
    IEEE Transactions on Nanotechnology
  • Serial Year
    2003
  • Journal title
    IEEE Transactions on Nanotechnology
  • Record number

    398333

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=398333