Title of article
Performance modeling of resonant tunneling-based random-access memories
Author/Authors
Hui Zhang، نويسنده , , Mazumder، نويسنده , , P.، نويسنده , , Li Ding، نويسنده , , Kyounghoon Yang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
9
From page
472
To page
480
Keywords
power consumption , tunnelingbasedrandom-access memory (TRAM). , dynamic random access memory(DRAM) , soft error rate (SER) , Critical charge
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2005
Journal title
IEEE Transactions on Nanotechnology
Record number
398516
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