Title of article
Monte Carlo simulation of symmetric and asymmetric double-gate MOSFETs using Bohm-based quantum correction
Author/Authors
Bo Wu، نويسنده , , Ting-wei Tang، نويسنده , , Joonwoo Nam، نويسنده , , Jyun-Hwei Tsai، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
291
To page
294
Keywords
double gate (DG) MOSFET , Bohm potential , quantum corrected Monte Carlo simulation.
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2003
Journal title
IEEE Transactions on Nanotechnology
Record number
398604
Link To Document