Quantitative X-ray standing-wave phase analysis by means of photoelectrons

Quantitative information on a subsurface layer structure is obtained through the determination of the photoelectron escape depth by using the photoelectrons emitted by an X-ray standing wavefield in the range of dynamical X-ray diffraction from highquality crystals. A simple method to determine the mean escape depth L of low-energyloss photoelectrons is proposed, based on the analysis of the phase of the X-ray standing wavefield in a specially designed epitaxic structure grown by molecular-beam epitaxy.