• Title of article

    Test Consideration for Nanometer-Scale CMOS Circuits

  • Author/Authors

    Kaushik Roy، نويسنده , , Purdue University T.M. Mak، نويسنده , , Intel Kwang-Ting (Tim) Cheng، نويسنده , , Universityy of California، نويسنده , , Santa Barbara ، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    9
  • From page
    128
  • To page
    136
  • Abstract
    The exponential increase in leakage, the device parameter variations, and the aggressive power management techniques will severely impact IC testing methods. Test technology faces new challenges as faults with increasingly complex behavior become predominant. Design approaches aimed at fixing some of the undesirable effects of nanometric technologies could jeopardize current test approaches. In this article, we explore test considerations for scaled CMOS circuits in the nanometer regime and describe possible solutions to many of these challenges, including statistical timing and delay test, IDDQ test under exponentially increasing leakage, and power or thermal management architectures.
  • Journal title
    IEEE Design and Test of Computers
  • Serial Year
    2006
  • Journal title
    IEEE Design and Test of Computers
  • Record number

    431649