Title of article
Test Consideration for Nanometer-Scale CMOS Circuits
Author/Authors
Kaushik Roy، نويسنده , , Purdue University T.M. Mak، نويسنده , , Intel Kwang-Ting (Tim) Cheng، نويسنده , , Universityy of California، نويسنده , , Santa Barbara ، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
9
From page
128
To page
136
Abstract
The exponential increase in leakage, the device parameter variations, and the aggressive power management techniques will severely impact IC testing methods. Test technology faces new challenges as faults with increasingly complex behavior become predominant. Design approaches aimed at fixing some of the undesirable effects of nanometric technologies could jeopardize current test approaches. In this article, we explore test considerations for scaled CMOS circuits in the nanometer regime and describe possible solutions to many of these challenges, including statistical timing and delay test, IDDQ test under exponentially increasing leakage, and power or thermal management architectures.
Journal title
IEEE Design and Test of Computers
Serial Year
2006
Journal title
IEEE Design and Test of Computers
Record number
431649
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