Highly ordered cobalt-manganese oxide (CMO) nanowire array thin film on Ti/Si substrate as an electrode for electrochemical capacitor

Anodic aluminum oxide (AAO) on Ti/Si substrate was successfully synthesized by a two-step electrochemical anodization of the aluminum film on the Ti/Si substrate and then used as template to grow nanowire array. The ordered cobalt-manganese oxide (CMO) nanowires with diameter about 30 nm were directly fabricated on AAO/Ti/Si substrate by direct current (dc) electrodeposition. The microstructure of the nanowire array electrode was investigated by field emission scanning electron microscope (FESEM) and transmission electron microscope (TEM). The electrochemical characterization was performed using cyclic voltammetry in 0.5 M Na2SO4 aqueous solution. The ideal capacitive behavior was obtained from the as-prepared sample heat-treated at 100 °C. The specific capacitance of the electrode was 396 F g−1.