Thermodynamic Analysis of Ga-N-C-H system for MOVPE process

In this paper, the effect of NH3 decomposition rate on the composition conditions necessary to grow a single phase GaN film has been studied thermodynamically with trimethyl gallium (Ga(CH3)3) and ammonia (NH3) as the source gases and hydrogen (H2) as the carrier gas for the MOVPE process. The results indicated that the Gas+Nitride two phase region essential for the growth of GaN epitaxy layer becomes narrower with increase of the NH3 decomposition rate. This explained the high value of V/III ratio during the practical growth process. This analysis also implied that low NH3 decomposition rate might possibly facilitate the MOVPE growth of GaN epitaxy layer.