Title of article
Radon emanation measurements using silicon photodiode detectors
Author/Authors
J. L. Gutiérrez، نويسنده , , M. Garc?a-Talavera، نويسنده , , V. Pe?a، نويسنده , , J. C. Nalda، نويسنده , , M. Voytchev، نويسنده , , R. L?pez، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
583
To page
587
Abstract
Driven by the global concern about radon hazards, a wide variety of methods to measure radon and its decay products have been developed. Pin silicon photodiodes are increasingly applied in this field, their main advantages being high detection efficiency for alpha particles and low cost. In this paper, we present a system to determine the emanation factor for 222Rn from porous material based on a pin photodiode. This equipment is valid both for field and laboratory measurements, allowing to monitor the external emanation conditions by means of temperature, humidity and pressure sensors. To illustrate the capabilities of the system, we present two case studies of samples with high and low 226Ra content. The activity of this radionuclide in the samples had been previously determined by γ-ray spectrometry.
Keywords
Emanation factor , Accumulation chamber , Silicon photodiodes , RADON
Journal title
Applied Radiation and Isotopes
Serial Year
2004
Journal title
Applied Radiation and Isotopes
Record number
541649
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