• Title of article

    Transport Phenomena of YB41Si1.2

  • Author/Authors

    Tanaka، Takaho نويسنده , , Ishizawa، Yoshio نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    -228
  • From page
    229
  • To page
    0
  • Abstract
    YB41Si1.2 was grown by a floating zone method with infrared heating. The crystal structure of YB41Si1.2 belongs to the orthorhombic system. The electrical resistivity, the Hall coefficient, and the Seebeck coefficient have been investigated from liquid nitrogen temperature to room temperature. The temperature dependence of the electrical resistivity was expressed as exp [(T0/T)1/4] and indicates semiconductive nature. The Hall mobility was estimated to an order of 0.1 cm2/V s or lower. The combined data of the Hall mobility and the electrical resistivity indicates that electrical conduction is not of the band conduction type but of hopping type. The Seebeck coefficient is almost temperature independent between 110 and 290 K with a value of about 180 muV/K. For temperatures lower than 110 K, the Seebeck coefficient decreases rapidly with decreasing temperature. The figure of merit of the thermoelectric conversion of YB41Si1.2 was estimated and discussed using present data.
  • Keywords
    hot compacting , explosive compression , Boron carbide , boron , sintering
  • Journal title
    JOURNAL OF SOLID STATE CHEMISTRY
  • Serial Year
    2000
  • Journal title
    JOURNAL OF SOLID STATE CHEMISTRY
  • Record number

    56515