Title of article
Transport Phenomena of YB41Si1.2
Author/Authors
Tanaka، Takaho نويسنده , , Ishizawa، Yoshio نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
-228
From page
229
To page
0
Abstract
YB41Si1.2 was grown by a floating zone method with infrared heating. The crystal structure of YB41Si1.2 belongs to the orthorhombic system. The electrical resistivity, the Hall coefficient, and the Seebeck coefficient have been investigated from liquid nitrogen temperature to room temperature. The temperature dependence of the electrical resistivity was expressed as exp [(T0/T)1/4] and indicates semiconductive nature. The Hall mobility was estimated to an order of 0.1 cm2/V s or lower. The combined data of the Hall mobility and the electrical resistivity indicates that electrical conduction is not of the band conduction type but of hopping type. The Seebeck coefficient is almost temperature independent between 110 and 290 K with a value of about 180 muV/K. For temperatures lower than 110 K, the Seebeck coefficient decreases rapidly with decreasing temperature. The figure of merit of the thermoelectric conversion of YB41Si1.2 was estimated and discussed using present data.
Keywords
hot compacting , explosive compression , Boron carbide , boron , sintering
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year
2000
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Record number
56515
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