Title of article
Effect of a current-sensing resistor on required MOSFET size
Author/Authors
B.، Bryant, نويسنده , , M.K.، Kazimierczuk, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-707
From page
708
To page
0
Abstract
The effect of a current-sensing resistor used in current-mode control of pulsewidth modulator (PWM) converters on required MOSFET aspect ratio, the ratio of channel width to channel length generally known as W/L, is studied. The results can also be applied to the effect of source parasitic resistance in a power MOSFET. These resistances require a significant increase in aspect ratio to achieve a desired maximum current capability. Experimental results are presented verifying the validity of the theoretical results.
Keywords
Structures , Privatization , Property rights
Journal title
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS
Record number
61159
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