Title of article
High-linearity class B power amplifiers in GaN HEMT technology
Author/Authors
Xie، Shouxuan نويسنده , , V.، Paidi, نويسنده , , R.، Coffie, نويسنده , , S.، Keller, نويسنده , , S.، Heikman, نويسنده , , B.، Moran, نويسنده , , A.، Chini, نويسنده , , S.P.، DenBaars, نويسنده , , U.، Mishra, نويسنده , , S.، Long, نويسنده , , M.J.W.، Rodwell, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-283
From page
284
To page
0
Abstract
A 36-dBm, high-linearity, single-ended class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that class B power amplifiers can achieve IM3 suppression comparable to class A, while providing approximately 10% improved power added efficiency.
Keywords
Power-aware
Journal title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Serial Year
2003
Journal title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Record number
66090
Link To Document