Title of article
Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate
Author/Authors
N.، Vellas, نويسنده , , C.، Gaquiere, نويسنده , , A.، Minko, نويسنده , , V.، Hoel, نويسنده , , J.C.، De Jaeger, نويسنده , , Y.، Cordier, نويسنده , , F.، Semond, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-98
From page
99
To page
0
Abstract
The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 * 50 * 0.5 (mu)m^2 HEMT with a linear power gain of 16 dB. These results constitute the state of the art.
Keywords
Use of global and time-dependent local dominance rules to improve the neighborhood structure of the search space , Exploration capability of the genetic algorithm , Effectiveness of the algorithm
Journal title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Serial Year
2003
Journal title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Record number
66192
Link To Document