Electronic Transport Properties in InN Submicron n+-n-n+ Diode with InGaN Heterojunction Cathode

Ensemble Monte Carlo simulations have been performed to model electron transport in wurtzite phase InN diode with a InGaN heterojunction cathode. The hot electron injection through the heterojunction cathode was shown to not only increase the current density, but also improve the electron transport in the interface layer by inducing a higher electron density to the interface layer. Our analysis has also shown that the mean drift velocity for electrons in the channel is about 2.4×105 ms-1 at bias 4 V. Mean drift velocity in channel decrease with temperature and reach to saturated value about 1.55×105 ms-1.