Title of article
Experimental O VI dielectronic recombination rate coefficient and its enhancement by external electric fields
Author/Authors
Shi، W. نويسنده , , Bohm، S. نويسنده , , Muller، A. نويسنده , , Schippers، S. نويسنده , , Eklow، N. نويسنده , , Schuch، R. نويسنده , , Danared، H. نويسنده , , Badnell، N. R. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1156
From page
1157
To page
0
Abstract
The dielectronic recombination rate coefficient of O VI ions has been measured at the heavy ion storage ring CRYRING. The electron energy range covered all dielectronic recombination resonances attached to 2s (longrightarrow) 2p ((delta)n=0) core excitations. The rate coefficient in a plasma has been derived. It is compared to theoretical data. In addition the influence of external electric fields on the dielectronic recombination has been investigated. When increasing the electric field strength to 340 V/cm the experimental recombination rate coefficient is found to increase by up to a factor of 2.
Keywords
atomic data , atomic processes , line: formation , plasmas , radiation mechanisms: general
Journal title
Astronomy and Astrophysics
Serial Year
2003
Journal title
Astronomy and Astrophysics
Record number
76851
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