Fabrication of spintronic material Cd1−x Mnx Te using stack deposition

Spintronic materials, employing the spin of carriers as a medium for sending information beside their charges, have drawn significant attention of scientists since the last decade for their uses in multifunctional and energy saving devices. Manganese doped cadmium telluride, Cd1−xMnxTe, is reported as a material for spin control under the influence of magnetic field due to the presence of manganese. Stacks of CdTe and MnTe were deposited on basic substrates like glass. After deposition the stacks were given a heat treatment for interdiffusion of materials either to form a solid solution or a composite. The state of the diffusion further indicated about their response in the magnetic field. In the present study, various numbers of stacks were deposited and annealed at different temperatures to study their response both in electric and magnetic fields. The results thus obtained were fitted in a mathematical model to finalize the optimum condition for fabricating the exact material for spintronic action. The details of fabrication, studies and the responses will be discussed in the text of the paper. C 2005 Springer Science + Business Media, Inc.