Title of article
Effect of zirconium addition on formation of CoSi2 thin films
Author/Authors
FANXIONG CHENG?، نويسنده , , CHUANHAI JIANG، نويسنده , , XIANPING DONG، نويسنده , , HAIFENG WU، نويسنده , , Jiansheng Wu، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
4
From page
5655
To page
5658
Abstract
CoSi2 thin films were prepared by annealing the amorphous Co-Si thin films. Zr was added
into the amorphous thin film in order to investigate its effect on formation of CoSi2 thin
film. It was found that Zr increased the crystallization nucleation barrier and accelerated the
complete transformation of CoSi to CoSi2. C 2005 Springer Science + Business Media, Inc.
Journal title
Journal of Materials Science
Serial Year
2005
Journal title
Journal of Materials Science
Record number
830348
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