Title of article
Electrical and optical properties of Indium sesquitelluride (In2Te3) thin films
Author/Authors
R. R. DESAI، نويسنده , , D. LAKSHMINARAYANA، نويسنده , , P. B. PATEL، نويسنده , , C. J. PANCHAL?، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2006
Pages
5
From page
2019
To page
2023
Abstract
Indium sesquitelluride (In2Te3) thin films were grown on glass substrates using a flash
evaporation technique. The nature of contact phenomena of Ag, Sn, In, Zn, Al-(p) In2Te3
junctions had been investigated. Ag, Sn, In and Zn metals were found to provide ohmic contact
for In2Te3 thin films. The variation of DC-electrical resistivity of In2Te3 thin films with
temperature was studied at different substrate temperatures. The optical measurements
revealed that the flash evaporated In2Te3 thin films possessing direct energy band-gap. The
variation of optical energy gap with substrate temperature was investigated. Film thickness,
substrate temperature, composition and crystallinity were found to determine the optimization
of electrical and optical properties of In2Te3 thin film.
C 2006 Springer Science + Business Media, Inc
Journal title
Journal of Materials Science
Serial Year
2006
Journal title
Journal of Materials Science
Record number
830731
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