Title of article
Oxidation behavior of silicon nitride sintered with Lu2O3 additive
Author/Authors
Madeleine K. Jordache، نويسنده , , Henry Du، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2006
Pages
5
From page
7040
To page
7044
Abstract
Kyocera SN282 silicon nitride ceramics
sintered with 5.35 wt% Lu2O3 were oxidized in dry
oxygen at 930–1,200 C. Oxidation of SN282 follows a
parabolic rate law. SN282 exhibits significantly lower
parabolic rate constants and better oxide morphological
stability than silicon nitride containing other
sintering additives under similar conditions. The
activation energy for oxidation of SN282 is
107 ± 5 kJ/mol K, suggesting inward diffusion of
molecular oxygen in the oxide layer as the ratelimiting
mechanism.
Journal title
Journal of Materials Science
Serial Year
2006
Journal title
Journal of Materials Science
Record number
832179
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